Defect diagnostics using scanning photoluminescence in multicrystalline silicon

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 549-552

  Tarasov, I ^a   Ostapenko, S ^a   Feifer, V ^a   McHugo, S ^b   Koveshnikov, S V ^c   Weber, J ^d   Haessler, C ^e   Reisner, E U ^e  

^a UNIVERSITY OF SOUTH FLORIDA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c SEH America   (United States)

^d MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^e BAYER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRONIC PROPERTIES; PHOTOLUMINESCENCE; SPECTROSCOPY;

PHOTOLUMINESCENCE SPECTROSCOPY;

SILICON WAFERS;

EID: 0033312172     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00570-0     Document Type: Article

References (7)

1. Y. Koshka, S. Ostapenko, I. Tarasov, S. McHugo, J.P. Kalejs, Appl. Phys. Lett. 74 (1999) 1555.
2. N.A. Drozdov, A.A. Patrin, V.D. Tkachev, JETP Lett. 23 (1976) 598.
3. R. Sauer, J. Weber, J. Stolz, E.R. Weber, K.-H. Kusters, H. Alexander, Appl. Phys. A 36 (1985) 1.
4. W. Staiger, G. Pfeiffer, K. Weronek, A. Hopner, J. Weber, Mater. Sci. Forum 83-87 (1994) 1571.
5. M. Bugajski, M. Goorsky, J. Lagowski, Electron. Technol. 24 (1991) 85.
6. M. Tajima, M. Tokita, M. Warashina, Mater. Sci. Forum 196-201 (1995) 1749.
7. S.A. McHugo, A.C. Thompson, I. Perichaud, S. Martinuzzi, Appl. Phys. Lett. 72 (1998) 3482.