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Volumn 66, Issue 3-4, 2002, Pages 403-408
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Limited reaction growth of YSZ (ZrO2:Y2O3) thin films for gate insulator
a
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Author keywords
Epitaxial growth; High k materials; Limited reaction sputtering technique; ZrO2
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Indexed keywords
ELECTRIC INSULATORS;
ELECTRIC PROPERTIES;
EPITAXIAL GROWTH;
GATES (TRANSISTOR);
SPUTTERING;
THIN FILMS;
YTTRIUM COMPOUNDS;
GATE INSULATORS;
ZIRCONIA;
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EID: 0037136146
PISSN: 0042207X
EISSN: None
Source Type: Journal
DOI: 10.1016/S0042-207X(02)00162-8 Document Type: Article |
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Times cited : (9)
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References (12)
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