Oxidation of Si during the growth of SiOx by ion-beam sputter deposition: In situ x-ray photoelectron spectroscopy as a function of oxygen partial pressure and deposition temperature

Physical Review B - Condensed Matter and Materials Physics

Volumn 74, Issue 15, 2006, Pages

  Kim, Kyung Joong ^a   Kim, Jeong Won ^a   Yang, Moon Seung ^b   Shin, Jung Hoon ^b  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33749666003     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.74.153305     Document Type: Article

References (24)

1. T. Engel, Surf. Sci. Rep. SSREDI 0167-5729 10.1016/0167-5729(93)90016-I 18, 91 (1993).
2. R. Ludeke and A. Koma, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.34.1170 34, 1170 (1975).
3. M. Schulz, Nature (London) NATUAS 0028-0836 10.1038/21526 399, 729 (1999).
4. Z. H. Lu, D. J. Lockwood, and J. M. Baribeau, Nature (London) NATUAS 0028-0836 10.1038/378258a0 378, 258 (1995).
5. M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.82.197 82, 197 (1999).
6. M. Zacharias, J. Heitmann, R. Scholz, U. Kahler, M. Schmidt, and J. Blasing, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1433906 80, 661 (2002).
7. Y. Q. Wang, G. L. Kong, W. D. Chen, H. W. Diao, C. Y. Chen, S. B. Zhang, and X. B. Liao, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1525395 81, 4174 (2002).
8. M. S. Yang, K. S. Cho, J. H, Jhe, S. Y. Seo, J. H. Shin, K. J. Kim, and D. W Moon, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1787599 85, 3408 (2004).
9. M. S. Yang, J. H. Shin, K. J. Kim, and D. W. Moon, Appl. Phys. Lett. (to be published).
10. G. Hollinger and F. J. Himpsel, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.28.3651 28, 3651 (1983).
11. S. H. Lee and M. H. Kang, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.82.968 82, 968 (1999).
12. K. Y. Kim, T. H. Shin, S. J. Han, and H. Kang, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.82.1329 82, 1329 (1999).
13. K. J. Kim and D. W. Moon, Surf. Interface Anal. SIANDQ 0142-2421 10.1002/(SICI)1096-9918(199801)26:1<9::AID-SIA341>3.0.CO;2-I 26, 9 (1998).
14. K. J. Kim, D. W. Moon, S. K. Lee, and K.-H. Jung, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(99)00562-3 360, 118 (2000).
15. K. S. Park, D. Y. Lee, K. J. Kim, and D. W. Moon, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.118402 70, 315 (1997).
16. F. C. Tompkins, Chemisorption of Gases on Metals (Academic Press, London, 1978), p. 20.
17. M. P. D'Evelyn, M. M. Nelson, and T. Engel, Surf. Sci. SUSCAS 0039-6028 186, 75 (1987).
18. M. P. Seah and S. J. Spencer, Surf. Interface Anal. SIANDQ 0142-2421 10.1002/sia.1565 35, 515 (2003).
19. L. Pavesi, L. D. Negro, C. Mazzoleni, G. Franzo, and F. Priolo, Nature (London) NATUAS 0028-0836 10.1038/35044012 408, 440 (2000).
20. F. Iacona, G. Franzo, and C. Spinella, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.372013 87, 1295 (2000).
21. R. I. Masel, Principles of Adsorption and Reaction on Solid Surfaces (John Wiley & Sons, New York, 1996), p. 244.
22. R. E. Walkup and S. I. Raider, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.100105 53, 888 (1988).
23. C.-J. Han and C. R. Helms, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.2100661 134, 1297 (1987);
24. H. Z. Massoud, J. D. Plummer, and E. A. Irene, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.2113648 132, 2685 (1985).