First-principles investigation of (100)Ge/Ge(Hf)O2 interfaces

ECS Transactions

Volumn 11, Issue 4, 2007, Pages 471-478

  Houssa, M ^a,b   Pourtois, G ^a   Bellenger, F ^a,b   Caymax, M ^a   Meuris, M ^a   Heyns, M M ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY FUNCTIONAL THEORY; DIELECTRIC MATERIALS; ELECTRONIC PROPERTIES; ENERGY GAP; INTERFACE STATES; LOGIC GATES; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; SEMICONDUCTING GERMANIUM;

DEFECT LEVELS; FIRST-PRINCIPLES INVESTIGATIONS; GATE STACKS; INTERFACIAL LAYER; STRUCTURAL AND ELECTRONIC PROPERTIES;

GERMANIUM COMPOUNDS;

EID: 45049087969     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2779583     Document Type: Conference Paper

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