Annealing effect on the electrical activity of extended defects in plastically deformed p-Si with low dislocation density

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 5, 2005, Pages 896-900

  Feklisova, O V ^a   Pichaud, B ^b   Yakimov, E B ^a  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b AIX MARSEILLE UNIVERSITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION TRAILS; ELECTRICAL ACTIVITY; RECOMBINATION DEFECTS;

CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; PLASTIC DEFORMATION; RAPID THERMAL ANNEALING; REACTION KINETICS;

POROUS SILICON;

EID: 25444500440     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200460511     Document Type: Conference Paper

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