Characterization of strained-Si/SiGe/Si heterostructures with capacitance methods

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6260, Issue , 2006, Pages

  Yarykin, Nikolai ^a   Zhang, Renhua ^b   Rozgonyi, George ^b  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b North Carolina State University   (United States)

Author keywords

CV; DLTS; Heterostructures; SiGe; Strained Si

Indexed keywords

CAPACITANCE; CHARACTERIZATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; STRAIN;

CV; SIGE; STRAINED SI;

HETEROJUNCTIONS;

EID: 33746067154     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.683403     Document Type: Conference Paper

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