Contribution of the disturbed dislocation slip planes to the electrical properties of plastically deformed silicon

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 1005-1008

  Feklisova, O V ^a   Yakimov, E B ^a   Yarykin, N ^a  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

Dislocations; DLTS; EBIC; Silicon

Indexed keywords

ANNEALING; BORON; CORRELATION METHODS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIAMONDS; ELASTICITY; ELECTRIC FIELD EFFECTS; ELECTRON BEAMS; ELECTROSTATICS; ION IMPLANTATION; NUCLEATION; OHMIC CONTACTS; PLASTIC DEFORMATION; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SURFACE TOPOGRAPHY;

ELECTRICAL ACTIVITY; ELECTRON BEAM INDUCED CURRENTS (EBIC); SPATIAL DISTRIBUTION;

SILICON;

EID: 0346504172     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.196     Document Type: Conference Paper

References (12)

1. Kisielowski C., Weber E.R. Phys. Rev. B. 44:1991;1600.
2. Bondarenko I.E., et al. Phys. Stat. Sol. (a). 68:1981;53.
3. Yakimov E.B., Bondarenko I.E., Yarykin N.A. Mater. Sci. Forum. 10-12:1986;787.
4. Bondarenko I.E., et al. Phys. Stat. Sol. (a). 95:1986;173.
5. Bondarenko I.E., Yakimov E.B. Phys. Stat. Sol. (a). 122:1990;121.
6. Kittler M., Ulhaq-Bouillet C., Higgs V. Mater. Sci. Eng. B. 24:1994;52.
7. Donolato C. Semicond. Sci. Technol. 7:1992;37.
8. Yakimov E.B. J. Phys.: Condens. Matter. 14:2002;13069.
9. Yarykin N., Steinman E. in these Proceedings (ICDS-22), Physica B. 340-342:2004.
10. Libertino S., Coffa S., Benton J.L. Phys. Rev. B. 63:2001;195206.
11. Aristov V.V., et al. Phys. Stat. Sol. (a). 102:1987;687.
12. Pichaud B., Mariani-Regula G., Yakimov E.B. Mater. Sci. Eng. B. 71:2000;272.