SCOPUS 정보 검색 플랫폼

Volumn 18, Issue 23, 2008, Pages 2704-2708

Incorporation of ionic photoacid generator (PAG) and base quencher into the resist polymer main chain for sub-50 nm resolution patterning

(6) Wang, Mingxing a Lee, Cheng Tsung b Henderson, Clifford L b Yueh, Wang c Roberts, Jeanette M c Gonsalves, Kenneth E a

a UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE (United States)

b Georgia Institute of Technology (United States)

c INTEL CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICALS; COATING TECHNIQUES; ELECTRON BEAM LITHOGRAPHY; EXTREME ULTRAVIOLET LITHOGRAPHY; FUNCTIONAL GROUPS; MULTITASKING; NEGATIVE IONS; OPTICS; PHOTORESISTS; PIGMENTS; POLYMERS; POSITIVE IONS; QUENCHING;

BASE QUENCHERS; CHEMICALLY AMPLIFIED RESISTS (CAR); ELECTRON-BEAM LITHOGRAPHY (EBL); EXTREME ULTRA-VIOLET LITHOGRAPHY (EUVL); NEW SERIES; PHOTO ACID GENERATOR (PAG); POLYMER BACKBONES; POLYMER MAIN CHAIN; ROYAL SOCIETY OF CHEMISTRY (RSC); SUB-50 NM;

PHOTORESISTORS;

EID: 44649166512 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/b801517a Document Type: Article

Times cited : (21)

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