Modeling the infrared reflectance of n-/n+ SiC layers on top of n+ SiC substrates for epitaxy control application

Physica Status Solidi (A) Applied Research

Volumn 195, Issue 1 SPEC, 2003, Pages 38-43

  Camassel, J ^a   Pernot, J ^a   Wang, H Y ^a   Peyre, H ^a  

^a UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC EQUIPMENT; EPITAXIAL GROWTH; INFRARED RADIATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS;

INFRARED REFLECTANCE;

SILICON CARBIDE;

EID: 0037277953     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306265     Document Type: Conference Paper

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