메뉴 건너뛰기




Volumn 103, Issue 10, 2008, Pages

Arsenic dependence on the morphology of ultrathin GaAs layers on In0.53 Ga0.47 AsInP (001)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; DEPOSITION; DIFFUSION; GALLIUM COMPOUNDS; SCANNING TUNNELING MICROSCOPY;

EID: 44649110786     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2917276     Document Type: Article
Times cited : (4)

References (29)
  • 10
    • 51249188112 scopus 로고
    • 0026-086X 10.1007/BF02642562, ();, Sov. Phys. Dokl. 0038-5689 31, 831 (1986);, Acta Metall. 0001-6160 10.1016/0001-6160(89)90246-0 37, 621 (1989);, J. Appl. Phys. 73, 4955 (1993).
    • R. J. Asaro and W. A. Tiller, Metall. Trans. 0026-086X 10.1007/BF02642562 3, 1789 (1972); M. A. Grinfeld, Sov. Phys. Dokl. 0038-5689 31, 831 (1986); D. Srolovitz, Acta Metall. 0001-6160 10.1016/0001-6160(89)90246-0 37, 621 (1989); B. J. Spencer, P. W. Voorhees, and S. H. Davis, J. Appl. Phys. 73, 4955 (1993).
    • (1972) Metall. Trans. , vol.3 , pp. 1789
    • Asaro, R.J.1    Tiller, W.A.2    Grinfeld, M.A.3    Srolovitz, D.4    Spencer, B.J.5    Voorhees, P.W.6    Davis, S.H.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.