Efficiency difference in Ga adatom incorporation in MBE growth of GaAs with As2 and As4 molecular beams

Journal of Crystal Growth

Volumn 211, Issue 1, 2000, Pages 416-420

  Ogura, T ^a   Nishinaga, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ARSENIC; ATOMS; CRYSTAL ORIENTATION; DECOMPOSITION; DESORPTION; DIFFUSION; DISSOCIATION; MOLECULAR BEAMS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE;

INCORPORATION DIFFUSION LENGTH; SURFACE DIFFUSION;

MOLECULAR BEAM EPITAXY;

EID: 0033872857     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00804-0     Document Type: Article

References (9)

1. Foxon C.T., Joyce B.A. Surf. Sci. 50:1975;434.
2. Foxon C.T., Joyce B.A. Surf. Sci. 50:1977;293.
3. H. Nishida, S. Fujii, H. Nakayama, T. Nishino, Proceedings of Second Topical Meeting on Structural Dynamics of Epitaxy and Quantum Mechanical Approach, 22 Jan. 1997, Kobe.
4. Yamashiki A., Nishinaga T. J. Crystal Growth. 198/199:1999;1125.
5. Nishinaga T., Shen X.Q., Kishimoto D. J. Crystal Growth. 163:1996;60.
6. Hata M., Isu T., Watanabe A., Katayama Y. Appl. Phys. Lett. 56:1990;2542.
7. Hata M., Isu T., Watanabe A., Katayama Y. J. Vac. Sci. Technol. B. 8:1990;692.
8. Kirwan D.J. J. Electrochem. Soc. 117:1970;932.
9. Tok E.S., Neave J.H., Zhang J., Joyce B.A., Jones T.S. Surf. Sci. 297:1997;397.