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Volumn 36, Issue 9 A, 1997, Pages 5670-5673

Difference in diffusion length of Ga atoms under As2 and As4 flux in molecular beam epitaxy

Author keywords

As2 flux; Diffusion length; GaAs quantum wire; Molecular beam epitaxy (MBE); V grooved substrate

Indexed keywords

DIFFUSION IN SOLIDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

DIFFUSION LENGTH; V GROOVED SUBSTRATES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031223305 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.5670 Document Type: Article

Times cited : (18)

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