Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 852-857

  Averett, K L ^a,b,c   Wu, X ^a   Koch, M W ^c   Wicks, G W ^c  

^a UNIVERSITY OF ROCHESTER   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF ROCHESTER   (United States)

Author keywords

A3. Metamorphic epitaxy; A3. Molecular beam epitaxy; B2. Semiconducting indium compounds; B3. Bipolar transistors; B3. Heterojunction semiconductor devices

Indexed keywords

ATOMIC FORCE MICROSCOPY; GAIN MEASUREMENT; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; SURFACE ROUGHNESS;

EMITTERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0037382738     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02366-7     Document Type: Conference Paper

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