Stress and surface energies versus surface nanostructuring: The InGaAs/InP(0 0 1) epitaxial system

Journal of Crystal Growth

Volumn 273, Issue 1-2, 2004, Pages 136-148

  Porte, L ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

A1. Morphological stability; A1. Nanostructures; A1. Scanning tunnelling microscopy; A1. Surface structures; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; POSITIVE IONS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; STRESS ANALYSIS; SURFACE PROPERTIES;

CATION SPECIES; GROWTH SURFACE; MORPHOLOGICAL STABILITY; SEMICONDUCTING III-V MATERIALS;

NANOSTRUCTURED MATERIALS;

EID: 10044235733     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.09.024     Document Type: Article

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