Influence of arsenic incorporation on surface morphology and Si doping in GaAs(110) homoepitaxy

Microelectronics Journal

Volumn 28, Issue 8-10, 1997, Pages 833-839

  Tok, E S ^a   Neave, J H ^a   Fahy, M R ^a   Allegretti, F E ^a   Zhang, J ^a   Jones, T S ^a   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004701126     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(96)00122-x     Document Type: Article

References (22)

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