Evaluation of dislocation-related defects in GaN using deep-level transient spectroscopy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2568-2571

  Tokuda, Yutaka ^a   Matuoka, Youichi ^a   Yoshida, Kazuhiro ^a   Ueda, Hiroyuki ^b   Ishiguro, Osamw ^b   Soejima, Narimasa ^b   Kachi, Tetsu ^b  

^a AICHI INSTITUTE OF TECHNOLOGY   (Japan)

^b Rd Management Section   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CAPTURE; ENERGY LEVELS; NEUTRAL REGION; NITRIDE SEMICONDUCTORS;

CRYSTALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; GALLIUM NITRIDE; NITRIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS;

ELECTRIC CONDUCTIVITY;

EID: 36448987786     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674704     Document Type: Conference Paper

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