β-SiC thin film growth using microwave plasma activated CH4-SiH4 sources

Thin Solid Films

Volumn 341, Issue 1, 1999, Pages 42-46

  Kim, H S ^a,b   Park, Y J ^a   Choi, I H ^b   Baik, Y J ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ACTIVATION; CRYSTALLIZATION; FILM GROWTH; GRAIN SIZE AND SHAPE; LOW TEMPERATURE OPERATIONS; METHANE; MICROWAVES; PLASMAS; SILANES; STOICHIOMETRY; SUBSTRATES; THIN FILMS;

LOW TEMPERATURE GROWTH; MICROVOID; MICROWAVE PLASMA;

SILICON CARBIDE;

EID: 0032636929     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01538-7     Document Type: Article

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