Measurement of shallow dopant profile using scanning capacitance microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 6 B, 2004, Pages 3990-3994

  Goragot, W ^a   Takai, M ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Scanning capacitance microscope (SCM); Shallow dopant profile; Shallow trench isolation (STI); Spatial resolution

Indexed keywords

SCANNING CAPACITANCE MICROSCOPES (SCM); SHALLOW DOPANT PROFILES; SHALLOW TRENCH ISOLATION (STI); SPATIAL RESOLUTION;

CAPACITANCE; CARRIER CONCENTRATION; FEEDBACK CONTROL; ION IMPLANTATION; MOSFET DEVICES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

SEMICONDUCTOR DEVICES;

EID: 4444314577     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.3990     Document Type: Conference Paper

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