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Volumn 22-27-September-2002, Issue , 2002, Pages 264-267
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Shallow arsenic profiling using medium energy ion scattering (MEIS)
a a a a b c a |
Author keywords
Crystallization; Detectors; Energy resolution; Helium; Materials science and technology; Particle scattering; Power engineering and energy; Probes; Rapid thermal annealing; Voltage
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Indexed keywords
ANNEALING;
ARSENIC;
CRYSTALLIZATION;
DEPTH PROFILING;
DETECTORS;
ELECTRIC POTENTIAL;
HELIUM;
ION BEAM LITHOGRAPHY;
ION IMPLANTATION;
MASS SPECTROMETRY;
PLASMA INTERACTIONS;
PROBES;
RAPID THERMAL ANNEALING;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SECONDARY ION MASS SPECTROMETRY;
ENERGY RESOLUTIONS;
MATERIALS SCIENCE AND TECHNOLOGY;
MEDIUM ENERGY ION SCATTERING;
MINIMUM FEATURE SIZES;
PARTICLE SCATTERING;
POWER ENGINEERING AND ENERGIES;
RAPID THERMAL ANNEALING (RTA);
SECONDARY ION MASS SPECTROSCOPIES (SIMS);
IONS;
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EID: 84961295756
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IIT.2002.1257989 Document Type: Conference Paper |
Times cited : (2)
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References (11)
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