Simulation and experimental validation of scanning capacitance microscopy measurements across low-doped epitaxial PN-junction

Microelectronics Reliability

Volumn 42, Issue 9-11, 2002, Pages 1701-1706

  Stangoni, M ^a   Ciappa, M ^a   Buzzo, M ^b   Leieht, M ^b   Fichtner, W ^a  

^a ETH ZURICH   (Switzerland)

^b INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC MATERIALS;

DEPLETION REGION; EXPERIMENTAL VALIDATIONS; P-N JUNCTION; SCANNING CAPACITANCE MICROSCOPY; SIGNAL GENERATION; TWO DIMENSIONAL DEVICE SIMULATORS;

MICROELECTRONICS;

EID: 0042467530     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00215-9     Document Type: Conference Paper

References (8)

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2. Ciampolini L. Scanning Capacitance Microscope Imaging and Modelling, Diss. ETH 14304, August 2001
3. Ciampolini L., Giannazzo F., Ciappa M., Fichtner W., Raineri V. Simulation of Scanning Capacitance Microscopy Measurements on bevelled n+-p Samples, E-MRS'2000 International Conference, Strasbourg, France, 2000
4. Ciampolini L., Giannazzo F., Ciappa M., Fichtner W., Raineri V. Simulation of Scanning Capacitance Microscopy Measurements on Microsectioned and bevelled Samples, Material Science in Semiconductor Pressing 4(2001)85
5. Edwards H. et al. PN-junction Delineation in Si Devices Using Scanning Capacitance Microscopy, J.Applied Physics Letters 82(2000)1485
6. O'Malley M.L. et al Electrical Simulation of Scanning Capacitance Microscopy Imaging of the PN-junction with Semiconductor Tips, Applied Physics Letters 74(1999)3672
7. Ciappa M., Stangoni M., Ciampolini L., Malberti P., Fichtner W. Modelling the Transfer Characteristics and Harmonic Distortion Effects in Scanning Capacitance Measurements, IEEE Instrumentation & Measurement Technology Conference 18(2001)804-809 (Pubitemid 32883864)
8. Sze S.M., Physics of Semiconductor Devices, J. Wiley