Development of enhanced depth-resolution technique for shallow dopant profiles

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 190, Issue 1-4, 2002, Pages 26-33

  Fujita, M ^a   Tajima, J ^a   Nakagawa, T ^a   Abo, S ^a   Kinomura, A ^a   Paszti F ^a   Takai, M ^a   Schork, R ^b   Frey, L ^b   Ryssel, H ^b  

^a OSAKA UNIVERSITY   (Japan)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

Author keywords

Depth resolution; MEIS; RBS; Si; SIMS; TEA

Indexed keywords

ELECTROSTATICS; ION BEAMS; PARTICLE DETECTORS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON;

DEPTH-RESOLUTION TECHNIQUE;

INTEGRATED CIRCUIT TESTING;

EID: 0036569052     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01248-4     Document Type: Conference Paper

References (11)