Exploration of Ba3N2 flux for GaN single-crystal growth

Journal of Crystal Growth

Volumn 310, Issue 12, 2008, Pages 2955-2959

  Bao, H Q ^a   Li, H ^a   Wang, G ^a   Song, B ^a   Wang, W J ^a   Chen, X L ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

A1. Characterization; A1. Crystal morphology; A1. X ray diffraction; A2. Single crystal growth; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL GROWTH; GALLIUM NITRIDE; MORPHOLOGY; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CRYSTAL MORPHOLOGY; SINGLE CRYSTAL GROWTH;

SINGLE CRYSTALS;

EID: 44149119060     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.02.023     Document Type: Article

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