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Applied Physics A: Materials Science and Processing

Volumn 78, Issue 1, 2004, Pages 29-31

Bulk GaN single crystals: Growth mechanism by using Li3N and Ga

(6) Wang, W J a Song, Y T a Yuan, W X b Cao, Y G a Wu, X a Chen, X L a

a INSTITUTE OF PHYSICS (China)

b UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; GALLIUM; LATTICE VIBRATIONS; LITHIUM COMPOUNDS; MORPHOLOGY; OPTICAL MICROSCOPY; PHONONS; RAMAN SCATTERING; REACTION KINETICS; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; SUPERSATURATION; X RAY POWDER DIFFRACTION;

CRYSTALLINE QUALITY; PHONON VIBRATION FREQUENCIES;

GALLIUM NITRIDE;

EID: 0742303167 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-003-2129-1 Document Type: Article

Times cited : (18)

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