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Electrochemical and Solid-State Letters

Volumn 3, Issue 1, 2000, Pages 53-55

Transparent Pt ohmic contact on p-type GaN with low resistivity using (NH4)2Sx treatment

(5) Lee, Jong Laxm a Kim, Jong Kyu a Lee, Jae Won b Park, Yong Jo b Kim, Taeil b

a Pohang University of Science and Technology (POSTECH) (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; FERMI LEVEL; NITRIDES; PLATINUM; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE CLEANING;

AMMONIUM SULFIDE; GALLIUM NITRIDE;

OHMIC CONTACTS;

EID: 0033640268 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.1390956 Document Type: Article

Times cited : (34)

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