Ohmic contact to p-type GaN

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 4 SUPPL. A, 1998, Pages 1768-1771

  Youn, Doo Hyeb ^a   Hao, Maosheng ^a   Sato, Hisao ^a   Sugahara, Tomoya ^a   Naoi, Yoshiki ^a   Sakai, Shiro ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

GaN:Ni alloy; Ohmic contact; p GaN; Zn diffusion

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION IN SOLIDS; ELECTRIC RESISTANCE MEASUREMENT; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; NICKEL ALLOYS; OHMIC CONTACTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY; ZINC;

CONTACT RESISTANCE; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032050593     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1768     Document Type: Article

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