Spectral dynamics of 405 nm (Al,In)GaN laser diodes grown on GaN and SiC substrate

Optics Express

Volumn 16, Issue 10, 2008, Pages 6833-6845

  Meyer, Tobias ^a,b   Braun, Harald ^a   Schwarz, Ulrich T ^a   Tautz, Sönke ^b   Schillgalies, Marc ^b   Lutgen, Stephan ^b   Strauss, Uwe ^b  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; PARAMETER ESTIMATION; SILICON CARBIDE; SPECTRUM ANALYSIS;

LASING SPECTRA; LONGITUDINAL MODES; SPECTRAL DYNAMICS;

SEMICONDUCTOR LASERS;

EID: 43849088322     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.16.006833     Document Type: Article

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