Observation of temperature-independent longitudinal-mode patterns in violet-blue InGaN-based laser diodes

IEEE Photonics Technology Letters

Volumn 17, Issue 9, 2005, Pages 1782-1784

  Eichler, Christoph ^a   Schad, Sven Silvius ^b   Scholz, Ferdinand ^b   Hofstetter, Daniel ^c   Miller, Stephan ^a   Weimar, Andreas ^a   Lell, Alfred ^a   Härle, Volker ^a  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

^b UNIVERSITY OF ULM   (Germany)

^c UNIVERSITY OF NEUCHÂTEL   (Switzerland)

Author keywords

Emission spectrum; InGaN laser diodes; Irregular spectral envelope

Indexed keywords

COMPUTER SIMULATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LASER MODES; LASER TUNING; LIGHT EMISSION; OPTICS; OPTOELECTRONIC DEVICES; REFRACTIVE INDEX; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

APERIODIC DEVICE-SPECIFIC LONGITUDINAL-MODE PATTERN; EMISSION SPECTRUM; FOURIER TRANSFORM SPECTROMETER; IRREGULAR SPECTRAL ENVELOPE;

SEMICONDUCTOR LASERS;

EID: 27144515887     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.852644     Document Type: Article

References (11)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matsushita, and T. Mukai, "Blue InGaN-based laser diodes with an emission wavelength of 450 nm," Appl. Phys. Lett., vol. 76, no. 1, pp. 22-24, 2000.
2. C. Eichler, D. Hofstetter, W. Chow, S. Miller, A. Weimar, A. Lell, and V. Härle,, "Microsecond time scale lateral-mode dynamics in a narrow stripe InGaN laser," Appl. Phys. Lett., vol. 84, no. 14, pp. 2473-2475, 2004.
3. O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. Eastman, "Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures," J. Phys.: Condens. Matter, vol. 14, pp. 3399-3434, 2002.
4. C. Humphreys, T. Smeeton, J. Barnard, and M. Kappers, "Is in clustering necessary for bright light emission from GaN-based devices?," presented at the Int. Workshop Nitride Semiconductors (IWN 2004), Pittsburgh, PA, Jul. 2004, Paper B4.8.
5. J. Narayan, H. Wang, J. Ye, S. Hon, K. Fox, J. Chen, H. Choi, and J. Fan, "Effect of thickness variation in high-efficiency InGaN/GaN light-emitting diodes," Appl. Phys. Lett., vol. 81, no. 5, pp. 841-843, 2002.
6. D. Hofstetter and J. Faist, "Measurement of semiconductor laser gain and dispersion curves utilizing fourier transforms of the emission spectra," IEEE Photon. Technol. Lett., vol. 11, no. 11, pp. 1372-1374, Nov. 1999.
7. K. Gan and J. Bowers, "Measurement of gain, group index, group velocity dispersion, and linewidth enhancement factor of an InGaN multiple quantum-well laser diode," IEEE Photon. Technol. Lett., vol. 16, no. 5, pp. 1256-1258, May 2004.
8. U. Schwarz, E. Sturm, W. Wegscheider, V. Kümmler, A. Lell, and V. Härle, "Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers," Appl. Phys. Lett., vol. 85, no. 9, pp. 1475-1477, 2004.
9. S. Nakamura, "InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained-layer superlattices," IEEE J. Sel. Topics Quantum Electron., vol. 4, no. 3, pp. 483-489, May/Jun. 1998.
10. C. Eichler, S. Schad, M. Seyboth, F. Habel, M. Scherer, S. Miller, A. Weimar, A. Lell, and V. Härle, "Time resolved study of GaN-based laser diode characteristics under pulsed operation," Phys. Stat. Sol., vol. 0, no. 7, pp. 2283-2286, 2003.
11. M. Y. A. Raja, S. R. J. Brueck, M. Osinski, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons, "Surface-emitting, multiple quantum well GaAs/AlGaAs laser with wavelength-resonant periodic gain medium," Appl. Phys. Lett., vol. 53, no. 18, pp. 1678-1680, 1988.