Simulation and design of optical gain in In(Al)GaN/GaN short wavelength lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6184, Issue , 2006, Pages

  Witzigmann, Bernd ^a   Laino, Valerie ^a   Luisier, Mathieu ^a   Roemer, Friedhard ^a   Feicht, Georg ^b   Schwarz, Ulrich T ^b  

^a ETH ZURICH   (Switzerland)

^b UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

Gain; Gallium; Nitride; Semiconductor Laser; Short wavelength; Simulation

Indexed keywords

COMPUTER SIMULATION; GAIN CONTROL; GALLIUM; GALLIUM NITRIDE; INDIUM COMPOUNDS; NITRIDES; PIEZOELECTRICITY; TEMPERATURE DISTRIBUTION; THICKNESS CONTROL;

HAKKI-PAOLI MEASUREMENTS; OPTICAL GAIN; SHORT WAVELENGTH; SHORT WAVELENGTH LASERS;

SEMICONDUCTOR LASERS;

EID: 33746664326     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.662048     Document Type: Conference Paper

References (16)

1. S. Nakamura, and G. Fasol. "The Blue Laser Diode", Springer, Berlin, 1997
2. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, "High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes", Applied Physics Letters, September 25, 1995, Volume 67, Issue 13, pp. 1868-1870
3. X. H. Wu, L. M. Brown, D. Kapolnek, S. Keller, B. Keller, S. P. DenBaars, and S. J. Speck, "Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3", J. Appl. Phys. 80, 3228 (1996).
4. Y. Yeo, T. Chong, and M. Li, "Uniaxial Strain Effect on the electronic and optical properties of wurtzite GaN AlGaN quantum well lasers", IEEE Journal of Quantum Electronics, 34, pp. 2224-2232, 1998.
5. W. W. Chow, M. Kira, and S. W. Koch, "Microscopic theory of nonlinearities and spontaneous emission lifetime in group-III nitride quantum wells," Phys. Rev. B, vol. 60, pp. 1947-1952, 1999.
6. T. Mukai, "Recent Progress in Group III Nitride Light-Emitting Diodes", IEEE Journal of Selected Topics in Quantum Electronics, 8, 2, pp. 264-270, March 2002.
7. F. Bernardini, and V. Fiorentini, "Nonlinear Macroscopic Polarization in II-V Alloys", Phys. Rev. B, vol. 64, pp. 085207, Aug. 2001.
8. W. Chow, and S. Koch, "Semiconductor Laser Fundamentals", Springer, 1999.
9. O. Hess and T. Kuhn, "Maxwell - Bloch equations for spatially inhomogeneous semiconductor lasers. I. Theoretical formulation", Phys. Rev. A, vol. 54, pp. 3347-3359, Oct. 1996.
10. W. Schaefer and M. Wegener, Semiconductor Optics and Transport Phenomena, Springer, (2002), Berlin.
11. J. Piprek, "Semiconductor Optoelectronic Devices", Elsevier, 2003.
12. I. Vurgaftman and J. R. Mayer, "Band parameters for nitrogencontaining semiconductors", Journal Appl. Phys., vol. 94, pp. 3675-3696, Sep. 2003.
13. B.W. Hakki and T. L. Paoli, "cw degradation at 300 K of GaAs double - heterostructure junction laser. II. Electronic gain", J. Appl. Phys., vol. 44, pp. 4113-4119, Sep. 1973.
14. U. T. Schwarz, E. Sturm, W. Wegscheider, V. K'ummler, A. Lell, V. Haerle, "Gain spectra and current-induced change of refractice index in (In/Al) GaN diode lasers", phys. stat. sol. (a), vol. 200, pp. 143-146, Oct. 2003.
15. U. T. Schwarz, E. Sturm, W. Wegscheider, V. Kümmler, A. Lell, and V. Härle, "Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers", Appl. Phys. Lett., vol. 85, pp. 1475-1477, Aug. 2004.
16. B. Witzigmann, V. Laino, M. Luisier, U. T. Schwarz, G. Feicht, W. Wegscheider, K. Engl, M. Furitsch, A. Leber, A. Lell, and V. Haerle, "Microscopic analysis of optical gain in InGaN/GaN quantum wells", Appl. Phys. Lett., vol. 88, pp. 021104, Jan. 2006.