Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition

Thin Solid Films

Volumn 383, Issue 1-2, 2001, Pages 307-309

  Dosev, D K ^a,b   Puigdollers, J ^a   Orpella, A ^a   Voz, C ^a   Fonrodona, M ^c   Soler, D ^c   Marsal, L F ^b   Pallares J ^b   Bertomeu, J ^c   Andreu, J ^c   Alcubilla, R ^a  

^a UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

^b UNIVERSITAT ROVIRA I VIRGILI   (Spain)

^c UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; HYDROGENATION; NANOSTRUCTURED MATERIALS;

HOT-WIRE CHEMICAL VAPOR DEPOSITION;

THIN FILM TRANSISTORS;

EID: 0035247558     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01608-4     Document Type: Article

References (9)

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