Study of the gate-sensing and channel-sensing transient analysis method for monitoring the charge vertical location of SONOS-type devices

IEEE Transactions on Device and Materials Reliability

Volumn 7, Issue 3, 2007, Pages 407-418

  Du, Pei Ying ^b,c   Lue, Hang Ting ^a,b   Wang, Szu Yu ^b   Lai, Erh Kun ^b   Huang, Tiao Yuan ^a,c   Hsieh, Kuang Yeu ^b   Liu, Rich ^a,b   Lu, Chih Yuan ^a,b  

^a IEEE

^b MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Charge density; Silicon oxide nitride oxide silicon (SONOS); Transient analysis; Trapping dynamics; Vertical location

Indexed keywords

CAPACITORS; CHANNEL ESTIMATION; CHARGE DENSITY; CHARGE TRAPPING; COMPUTER PROGRAMMING; MEASUREMENT ERRORS; TRANSIENT ANALYSIS;

CONVENTIONAL CHANNEL-SENSING; TRAPPING DYNAMICS; VERTICAL LOCATION;

SEMICONDUCTOR DEVICES;

EID: 35948973149     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2007.907290     Document Type: Article

References (8)

1. K. Kim, "Technology for sub-50 nm DRAM and NAND flash manufacturing," in IEDM Tech. Dig., 2005, pp. 333-336.
2. E. Suzuki, Y. Hayashi, K. Ishii, and T. Tsuchiya, "Traps created at the interface between the nitride and the oxide on the nitride by thermal oxidation," Appl., Phys. Lett., vol. 42, no. 7, pp. 608-610, Apr. 1983.
3. T. Ishida, Y. Okuyama, and R. Yamada, "Characterization of charge traps in metal-oxide-nitride-oxide-semiconductor (MONOS) structures for embedded Flash memories," in Proc. IEEE 44th Annu. Int. Reliab. Phys. Symp., 2006, pp. 516-522.
4. H. T. Lue, Y. H. Shih, K. Y. Hsieh, R. Liu, and C. Y. Lu, "A transient analysis method to characterize the trap vertical location in nitride-trapping devices," IEEE Electron Device Lett., vol. 25, no. 12, pp. 816-818, Dec. 2004.
5. A. Arreghini, F. Driussi, D. Esseni, L. Selmi, M. J. van Duuren, and R. van Schaijk, "Experimental extraction of the charge centroid and of the charge type in the P/E operation of SONOS memory cells," in IEDM Tech. Dig., 2006, pp. 1-4.
6. H. T. Lue, P. Y. Du, S. Y. Wang, E. K. Lai, K. Y. Hsieh, R. Liu, and C. Y. Lu, "A novel gate-sensing and channel-sensing transient analysis method for real-time monitoring of charge vertical location in SONOS-type devices and its applications in reliability studies," in Proc. IEEE 45th Annu. Int. Reliab. Phys. Symp., 2007, pp. 177-184.
7. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1983.
8. H. T. Lue, S. Y. Wang, E. K. Lai, Y. H. Shih, S. C. Lai, L. W. Yang, K. C. Chen, J. Ku, K. Y. Hsieh, R. Liu, and C. Y. Lu, "BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability," in IEDM Tech. Dig., 2005, pp. 547-550.