SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 114-117

STEM study of interfacial reaction at HfxAl1-xO y/Si interfaces

(5) Dai, J Y a Li, K b Lee, P F a Zhao, X a Redkar, S b

a HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

b CHARTERED SEMICONDUCTOR MANUFACTURING LTD (Singapore)

Author keywords

HfxAl1 xOy; High k gate dielectric; Interfacial structure; STEM

Indexed keywords

HFXAL1-XOY; HIGH-K GATE DIELECTRIC; INTERFACIAL STRUCTURE; SCANNING TRANSMISSION ELECTRON MICROSCOPY (STEM);

ENERGY DISPERSIVE SPECTROSCOPY; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); LASER BEAMS; PULSED LASER DEPOSITION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

SURFACE CHEMISTRY;

EID: 4344613638 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2004.05.139 Document Type: Article

Times cited : (5)

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