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Volumn 38, Issue 8 B, 1999, Pages 4876-4880
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Properties of Ru and RuO2 thin films prepared by metalorganic chemical vapor deposition
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Author keywords
Diffusion barrier; Microstructure; MOCVD; Resistivity; Ru and RuO2
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Indexed keywords
ANNEALING;
CRYSTAL MICROSTRUCTURE;
ELECTRIC CONDUCTIVITY MEASUREMENT;
FLOW CONTROL;
GRAIN SIZE AND SHAPE;
INTERDIFFUSION (SOLIDS);
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
OXIDATION;
OXYGEN;
RUTHENIUM;
RUTHENIUM COMPOUNDS;
SEMICONDUCTING SILICON;
DIFFUSION BARRIER;
RUTHENIUM CARBONYL;
RUTHENIUM OXIDE;
THIN FILMS;
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EID: 0033176723
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.38.4876 Document Type: Article |
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Times cited : (32)
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References (4)
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