Bottom electrode structures of Pt/RuO2/Ru on polycrystalline silicon for low temperature (Ba,Sr)TiO3 thin film deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 9 B, 1999, Pages 5317-5321

  Choi, Eun Suck ^a   Lee, Jae Chang ^a   Hwang, Jun Sik ^a   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

Author keywords

Barrier layer; Low temperature BST deposition; MOCVD; RuO2 Ru; Specific contact resistance

Indexed keywords

BARIUM TITANATE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PLATINUM; POLYCRYSTALLINE MATERIALS; RUTHENIUM; RUTHENIUM COMPOUNDS; SILICON WAFERS; THIN FILMS;

BARIUM STRONTIUM TITANATE;

ELECTRODES;

EID: 0033356599     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5317     Document Type: Article

References (9)

1. S. G. Yoon, J. C. Lee and A. Safari: J. Appl. Phys. 76 (1994) 2999.
2. S. G. Yoon and A. Safari: Thin Solid Films 254 (1995) 211.
3. W. J. Lee, S. G. Yoon and H. G. Kim: J. Appl. Phys. 80 (1996) 5891.
4. S. Onishi, M. Nagata, S. Mitarai, J. Kudo, K. Sakiyama, S. B. Desu, H.D. Bhatt, D. P. Vijay and Y. Hwang: J. Electrochem. Soc. 145 (1998) 2563.
5. K. L. Saenger, A. Grill and D. E. Kotecki: J. Appl. Phys. 83 (1998) 802.
6. D. S. Yoon, H. K. Baik, S. M. Lee and S. I. Lee: J. Vac. Sci. Technol. B 16 (1998) 1137.
7. H. J. Cho, H. Hori, C. S. Hwang, J. W. Kim, C. S. Kang, B. T. Lee, S. I. Lee, Y. B. Koh and M. Y. Lee: Jpn. J. Appl. Phys. 36 (1997) 1722.
8. W. C. Shin and S. G. Yoon: J. Electrochem. Soc. 144 (1997) 1055.
9. D. K. Schroder: Semiconductor Material and Device Characterization (John Wiley and Sons, Inc., New York, 1990) p. 114.