Thermodynamic calculations and metallorganic chemical vapor deposition of ruthenium thin films using bis(ethyl-π-cyclopentadienyl)Ru for memory applications

Journal of the Electrochemical Society

Volumn 147, Issue 3, 2000, Pages 1161-1167

  Kang, Sang Yeol ^a   Choi, Kook Hyun ^a   Lee, Seok Kiu ^a   Hwang, Cheol Seong ^a   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXYGEN; PARTIAL PRESSURE; PHASE COMPOSITION; PHASE EQUILIBRIA; TEMPERATURE; THERMODYNAMICS; THIN FILMS;

ETHYLCYCLOPENTADIENYL RUTHENIUM; PRECURSOR;

RUTHENIUM;

EID: 0033884603     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393330     Document Type: Article

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