Chemical vapor deposition of 4H-SiC epitaxial layers on porous SiC substrates

Applied Physics Letters

Volumn 78, Issue 1, 2001, Pages 117-119

  Mynbaeva, M ^a   Saddow, S E ^c   Melnychuk, G ^c   Nikitina, I ^a   Scheglov, M ^a   Sitnikova, A ^a   Kuznetsov, N ^a   Mynbaev, K ^a   Dmitriev, V ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b Technol and Devices Intl Inc   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001027096     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1337628     Document Type: Article

References (24)

1. A. Itoh and H. Matsunami, Crit. Rev. Solid State Mater. Sci. 22, 111 (1997).
2. V. E. Chelnokov, A. L. Syrkin, and V. A. Dmitriev, Diamond Relat. Mater. 6, 1480 (1997).
3. J. B. Casady and R. W. Johnson, Solid-State Electron. 39, 1409 (1996).
4. J. A. Cooper, Jr., M. R. Melloch, J. M. Woodall, J. Spitz, K. J. Schoen, and J. P. Henning, Mater. Sci. Forum 264, 895 (1998).
5. P. G. Neudeck and C. Fazi, IEEE Trans. Electron Devices 46, 485 (1999).
6. S. Konaka, M. Tabe, and T. Sakai, Appl. Phys. Lett. 41, 86 (1982).
7. S. Luryi and E. Suhir, Appl. Phys. Lett. 49, 140 (1986).
8. Y. Kao, K. Wang, B. Wu, T. Lin, C. Nien, D. Jamieson, and G. Bai. Appl. Phys. Lett. 51, 1809 (1987).
9. M. Mynbaeva, A. Titkov, A. Kryzhanovski, I. Kotousova, A. S. Zubrilov, V. V. Ratnikov, V. Yu. Davydov, N. I. Kuznetsov, K. Mynbaev, D. V. Tsvetkov, S. Stepanov, A. Cherenkov, and V. Dmitriev, MRS Internet J. Nitride Semicond. Res. 4, 14 (1999).
10. J. S. Shor, I. Grimberg, B. Weiss, and A. D. Kurtz, Appl. Phys. Lett. 62, 2836 (1993).
11. T. Matsumoto, J. Takahashi, T. Tamaki, T. Futagi, and H. Mimura, Appl. Phys. Lett. 64, 226 (1994).
12. A. O. Konstantinov, C. I. Harris, and E. Janzen, Appl. Phys. Lett. 65, 2699 (1994).
13. S. Zangooie and P. O. A. Persson, J. N. Hilfiker, L. Hultman, and H. Arwin, J. Appl. Phys. 87, 8497 (2000).
14. K. H. Wu, Y. K. Fang, W. T. Hsieh, J. J. Ho, W. J. Lin, and J. D. Hwang, Electron. Lett. 34, 2243 (1998).
15. H. Mimura, T. Matsumoto, and Y. Kanemitsu, Solid-State Electron. 40, 501 (1996).
16. V. B. Shields, M. A. Ryan, R. M. Williams, M G. Spencer, D. M. Collins, and D. Zhang, Inst. Phys. Conf. Ser. No. 142, 1067 (1995).
17. M. Mynbaeva, N. Savkina, A. Tregubova, M. Scheglov, A. Lebedev, A. Zubrilov, A. Titkov, A. Kryganovskii, K. Mynbaev, N. Seredova, D. Tsvetkov, S. Stepanov, A. Cherenkov, I. Kotousova, and V. Dmitriev, Mater. Sci. Forum 338, 225 (2000).
18. M. Mynbaeva, N. S. Savkina, A. S. Tregubova, M. P. Sheglov, A. A. Lebedev, A. Zubrilov, A. Titkov, A. Kryganovski, K. Mynbaev, N. Seredova, D. Tsvetkov, S. Stepanov, A. Cherenkov, I. Kotousova, and V. A. Dmitriev, Mater. Sci. Forum 338, 225 (2000).
19. TDI, Inc., Gaithersburg, MD 20877 (www.tdii.com).
20. S. E. Saddow, M. S. Mazzola, S. V. Rendakova, and V. A. Dmitriev, Mater. Sci. Eng., B 61, 158 (1999).
21. N. I. Kuznetsov, Semiconductors 27, 925 (1993).
22. S. Rendakova, V. Ivantsov, and V. Dmitriev, Mater. Sci. Forum 264, 163 (1998).
23. M. S. Mazzola, S. E. Saddow, P. G. Neudeck, V. K. Lakdawala, and S. We, Appl. Phys. Lett. 64, 2730 (1994).
24. G. Melnyehuk, S. E. Saddow, M. Mynbaeva, S. Rendakova, and V. Dmitriev, Proceedings of the MRS Spring 2000 Meeting (in press).