Electronic characteristics of Au/AlxGa1-xN structures grown with various x values

Journal of Crystal Growth

Volumn 220, Issue 1-2, 2000, Pages 62-67

  Lee, Cheul Ro ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; COMPOSITION EFFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

BARRIER HEIGHT; MOLE FRACTIONS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0034320730     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00758-2     Document Type: Article

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