Comparison of Al0.32 Ga0.68 NGaN heterostructure field-effect transistors with different channel thicknesses

Journal of the Electrochemical Society

Volumn 154, Issue 3, 2007, Pages

  Wang, Tzong Bin ^a   Hsu, Wei Chou ^a   Su, Jun Long ^a   Hsu, Rong Tay ^a,b   Wu, Yu Huei ^a,b   Lin, Yu Shyan ^a,c   Su, Ke Hua ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b Land Mark Optoelectronics Corporation   (Taiwan)

^c NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC BREAKDOWN; HETEROJUNCTIONS; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

CHANNEL THICKNESSES; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; PINCH OFF CHARACTERISTICS;

FIELD EFFECT TRANSISTORS;

EID: 33846956854     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2409478     Document Type: Article

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