Imaging of all dangling bonds and their potential on the Ge/Si(105) surface by noncontact atomic force microscopy

Physical Review Letters

Volumn 93, Issue 26 I, 2004, Pages

  Eguchi, T ^a   Fujikawa, Y ^b   Akiyama, K ^a,c   An, T ^a,c   Ono, M ^a   Hashimoto, T ^d   Morikawa, Y ^e   Terakura, K ^f   Sakurai, T ^b   Lagally, M G ^g   Hasegawa, Y ^a,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^e OSAKA UNIVERSITY   (Japan)

^f HOKKAIDO UNIVERSITY   (Japan)

^g UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT POTENTIAL DIFFERENCE (CPD); ELECTROSTATIC POTENTIAL; FREQUENCY DEMODULATION; KELVIN PROBE FORCE MICROSCOPY (KFM);

CHARGE TRANSFER; CHEMICAL BONDS; COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; DEPOSITION; DIMERS; ELECTRONIC STRUCTURE; ELECTROSTATICS; EPITAXIAL GROWTH; GERMANIUM; ION BEAMS; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE TOPOGRAPHY; ULTRAHIGH VACUUM;

ATOMIC FORCE MICROSCOPY;

EID: 42749098678     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.266102     Document Type: Article

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