SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 513, Issue 3, 2002, Pages

Rebonded SB step model of Ge/Si(1 0 5)1 × 2: A first-principles theoretical study

(6) Hashimoto, T a Morikawa, Y a,b Fujikawa, Y c,d Sakurai, T c Lagally, M G c,d Terakura, K a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Japan)

c TOHOKU UNIVERSITY (Japan)

d UNIVERSITY OF WISCONSIN MADISON (United States)

Author keywords

Density functional calculations; Germanium; Scanning tunneling microscopy; Silicon; Surface relaxation and reconstruction

Indexed keywords

CHEMICAL BONDS; ELECTRIC CHARGE; MATHEMATICAL MODELS; PROBABILITY DENSITY FUNCTION; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; STRUCTURAL OPTIMIZATION;

SURFACE RECONSTRUCTION;

SURFACE STRUCTURE;

EID: 0036679850 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(02)01813-7 Document Type: Article

Times cited : (32)

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