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Volumn 53, Issue 11, 1996, Pages 7205-7216

Lattice distortions and electronic structure in the negative silicon vacancy

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Indexed keywords


EID: 0041645504     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.7205     Document Type: Article
Times cited : (6)

References (16)
  • 1
    • 0004200984 scopus 로고
    • For a review of Watkins's experimental results and of the theoretical results for the vacancy see G. D. Watkins, in Deep Centers in Semiconductors, edited by S. T. Pantelides (Gordon and Breach, Philadelphia, 1986), p. 147.
    • (1986) Deep Centers in Semiconductors , pp. 147
    • Watkins, G.1
  • 15
    • 0012826031 scopus 로고
    • G. D. Watkins, Physica 117B&118B, 9 (1983).
    • (1983) Physica , vol.117B , pp. 9
    • Watkins, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.