Properties of Si:H thin films deposited by rf-PECVD of silane-argon mixtures with variation of the plasma condition

Journal of Non-Crystalline Solids

Volumn 299-302, Issue PART 1, 2002, Pages 123-127

  Ray, Partha Pratim ^a   Dutta Gupta, Namita ^a   Chaudhuri, Partha ^a   Williamson, D L ^a   Vignoli, S ^a   Longeaud, C ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; AMORPHOUS SILICON; ARGON; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; ION BOMBARDMENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SILANES; X RAY DIFFRACTION ANALYSIS;

HYDROGENATED SILICON FILMS;

THIN FILMS;

EID: 0036540475     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(01)00947-4     Document Type: Conference Paper

References (14)