Optical emission spectroscopic study of a radio-frequency plasma of Ar+SiH4

Chemical Physics Letters

Volumn 298, Issue 1-3, 1998, Pages 211-216

  Das, U K ^a   Chaudhuri, P ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000565722     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0009-2614(98)01186-5     Document Type: Article

References (15)

1. Godyak V.A., Piejak R.B. Phys. Rev. Lett. 65:1990;996.
2. Overjet L.J., Hopkins M.B. Appl. Phys. Lett. 63:1993;2484.
3. G. Turban, B. Drévillon, D.S. Mataras, D.E. Rapakoulias, in: G. Bruno, P. Capezzuto, A. Madan (Eds.), Plasma Deposition of Amorphous Silicon-Based Materials, Academic Press, 1995, p. 63.
4. Kawasaki H., Ohkura H., Fukuzawa T., Shiratani M., Watanabe Y., Yamamoto Y., Suganuma S., Hori M., Goto T. Jpn J. Appl. Phys. 36:1997;4985.
5. Kushner M.J. J. Appl. Phys. 63:1988;2532.
6. Makabe T., Nakano N., Yamaguchi Y. Phys. Rev. A. 45:1992;2520.
7. Sato N., Shida Y. Jpn J. Appl. Phys. 36:1997;4794.
8. Kampas F.J. J. Appl. Phys. 54:1983;2276.
9. Kampas F.J., Griffith R.W. J. Appl. Phys. 52:1981;1285.
10. Kampas F.J., Griffith R.W. Appl. Phys. Lett. 39:1981;407.
11. Kono A., Koike N., Okuda K., Goto T. Jpn J. Appl. Phys. 32:1993;L543.
12. Das U.K., Chaudhuri P., Kshirsagar S.T. J. Appl. Phys. 80:1996;5389.
13. Chaudhuri P., Das U.K. Jpn J. Appl. Phys. 36:1997;L1426.
14. Chaudhuri P., Das U.K. Jpn J. Appl. Phys. 34:1995;3467.
15. J. Yan, G. Zhang, Y. Fong, Z. Xi, in: Technical Digest of the International PVSEC-7, Nagoya, Japan, 1993, p. 195.