Global and local charge trapping in carbon nanotube field-effect transistors

Nanotechnology

Volumn 19, Issue 17, 2008, Pages

  Li, Hong ^a   Zhang, Qing ^a   Marzari, Nicola ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; CARRIER TRANSPORT; CHARGE TRAPPING; ELECTRONIC STATES; GATE DIELECTRICS;

BACK-GATE VOLTAGE SWEEPING; CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; VOLTAGE PULSES;

FIELD EFFECT TRANSISTORS;

CARBON NANOTUBE; SINGLE WALLED NANOTUBE;

ARTICLE; ATOMIC FORCE MICROSCOPY; DEVICE; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTOR; HYSTERESIS; PRIORITY JOURNAL;

EID: 42549085280     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/17/175203     Document Type: Article

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