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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 8-11, 2005, Pages

Air stable n-type top gate carbon nanotube filed effect transistors with silicon nitride insulator deposited by thermal chemical vapor deposition

(6) Kojima, Atsuhiko a Shimizu, Mitsuyasu b Chan, Kyeong Hyon a Kamimura, Takafumi a,c Maeda, Masatoshi a,d Matsumoto, Kazuhiko a,b,c

a JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

c OSAKA UNIVERSITY (Japan)

d UNIVERSITY OF TSUKUBA (Japan)

Author keywords

Air stable; Carbon naotube; Field effect transistor; n type; Silicon nitride; Thermal chemical vapor deposition; Top gate

Indexed keywords

CARBON NANOTUBES; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRIC INSULATORS; ENERGY GAP; GATES (TRANSISTOR); PHOTOLITHOGRAPHY; SEMICONDUCTING SILICON; SILICON NITRIDE; THIN FILMS; TRANSCONDUCTANCE;

AIR STABLE; N-TYPE; THERMAL CHEMICAL VAPOR DEPOSITION; TOP GATE;

FIELD EFFECT TRANSISTORS;

EID: 19944413115 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.L328 Document Type: Article

Times cited : (13)

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