Novel carbon nanotube FET design with tunable polarity

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 687-690

  Lin, Yu Ming ^a   Appenzeller, Joerg ^a   Avouris, Phaedon ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; DOPING (ADDITIVES); ELECTRIC CONTACTS; ELECTROSTATICS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); MOSFET DEVICES; TUNING; CARBON NANOTUBES; YARN;

CARBON NANOTUBE FIELD EFFECT TRANSISTORS (CNFET); CHEMICAL DOPING; NANOTUBE CHANNELS; THICKNESS SCALING;

CARBON NANOTUBES; ELECTROSTATICS;

CARBON NANOTUBE FET; CARBON NANOTUBE TRANSISTORS; CHEMICAL DOPING; HIGHPERFORMANCE; NOVEL DEVICES; OFF STATE; P-TYPE BEHAVIORS; STATE PERFORMANCE; TUNABLE POLARITIES; TUNABLES;

EID: 21644458600     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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