Reliability characteristics of high-K gate dielectrics HfO2 in metal-oxide semiconductor capacitors

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 643-647

  Han, Dedong ^a   Kang, Jinfeng ^a   Lin, Changhai ^a   Han, Ruqi ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Gate dielectrics; HfO2; High K; Reliability

Indexed keywords

DIELECTRIC FILMS; ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; SPUTTERING;

GATE DIELECTRICS;

MOS CAPACITORS;

EID: 0037391772     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00977-2     Document Type: Conference Paper

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