Laser doping of chromium as a double acceptor in silicon carbide with reduced crystalline damage and nearly all dopants in activated state

Acta Materialia

Volumn 56, Issue 8, 2008, Pages 1857-1867

  Bet, Sachin ^a   Quick, Nathaniel ^b   Kar, Aravinda ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b AppliCote Associates LLC   (United States)

Author keywords

Chromium; DLTS; Hall effect measurements; Laser doping; Silicon carbide

Indexed keywords

CRYSTALLINE MATERIALS; DOPING (ADDITIVES); LASER RADIATION; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE;

CRYSTALLINE DAMAGE; LASER DOPING;

CHROMIUM COMPOUNDS;

EID: 41949125137     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2007.12.047     Document Type: Article

References (30)

1. Harris G.L. Properties of silicon carbide (1995), IEE, London p. vii
2. Justo J.F., Machado W.V.M., and Assali L.V.C. Physica B 378 (2006) 376
3. Lebedev A.A. Semiconductors 33 2 (1999) 107
4. Hemstreet A. Phys Rev B 15 2 (1977) 834
5. Achtziger N., and Witthuhn W. Mater Sci Eng B 46 (1997) 333
6. Bet S.M., Quick N.R., and Kar A. SPIE OPTO 3 1 (2007) 6486-6549
7. Bet S.M., Quick N.R., and Kar A. Phys Stat Sol (a) 204 4 (2007) 1147
8. Denbaars S, Tarsa EJ, Mack M, Keller B, Thibeault B. US Patent 7,084,436 2006.
9. Quick NR. US patent 5,145,741 1992; US patent 5,837,607 1998; US patent 6,670,693 2003.
10. Salama IA, Ph.D. Dissertation, University of Central Florida, 2003.
11. Tian Z., Quick N.R., and Kar A. Acta Mater 53 (2005) 2835
12. Sengupta D.K., Quick N.R., and Kar A. J Laser Appl 13 (2001) 26
13. Tian Z., Quick N.R., and Kar A. J Electron Mater 34 4 (2005) 430
14. Tian Z., Quick N.R., and Kar A. Acta Mater 54 (2006) 4273
15. Schubert F.E. Light emitting diodes (2003), Cambridge University Press, Cambridge p. 21
16. Bäuerle D. Laser processing and chemistry. 3rd ed. (2002), Springer-Verlag, Berlin p. 103-17
17. Tian Z., Quick N.R., and Kar A. Mater Res Soc Symp Proc 911 (2006) B10-07
18. Okojie R.S., Xhang M., Pirouz P., Tumakha S., Jessen G., and Brillson L.J. Mater Sci Forum 389-393 (2002) 451
19. Nakashima S., Kato T., Nishizawa S., Mitani T., Okumura H., and Yamamotob T. J Electrochem Soc 153 4 (2006) G319-G323
20. Oswald S., and Wirth H. Surf Int Anal 27 (1999) 136
21. Kempshall B.W., Giannuzzi L.A., Prenitzer B.I., Stevie F.A., and Da S.X. J Vac Sci Technol B 20 1 (2002) 286
22. Okamoto H., and Massalski T.B. Bull Alloy Phase Diagr 6 3 (1985) 229
23. Lang D.V. J Appl Phys 45 (1974) 3023
24. Pan JL, US Patent 7049641 2006.
25. Grimmeiss H.G. In: Huff H.R., and Sirtl E. (Eds). Annu Rev Mater Sci 7 (1977) 341
26. Sze S.M. Physics of semiconductor devices. 2nd ed. (1981), John Wiley, New York p. 21
27. Mallik K., Falster R.J., and Wilshaw P.R. Semi Sci Tech 18 6 (2003) 517
28. Enderlein R., and Horing N.J.M. Fundamentals of semiconductor physics and devices (1997), World Scientific, Singapore p. 509-15
29. Livingstone A.W., and Allen J.W. J Phys C: Solid State Phys 6 (1973) 3491
30. Cesca T., Gasparotto A., Mattei G., Verna A., Fraboni B., Impellizzeri G., et al. Mater Res Soc Symp Proc 864 (2005) E1.5.1