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Volumn 864, Issue , 2005, Pages 21-26

Role of the substrate doping in the activation of Fe2+ centers in Fe implanted InP

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ION IMPLANTATION; SOLUBILITY;

EID: 30544451861     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-864-e1.5     Document Type: Conference Paper
Times cited : (1)

References (10)
  • 1
    • 0002372939 scopus 로고
    • edited by S. Pantelides, Gordon and Breach, New York
    • S.G. Bishop in Deep centers in semiconductors, edited by S. Pantelides, (Gordon and Breach, New York, 1986) p. 541.
    • (1986) Deep Centers in Semiconductors , pp. 541
    • Bishop, S.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.