'Semi-insulating' silicon using deep level impurity doping: Problems and potential

Semiconductor Science and Technology

Volumn 18, Issue 6, 2003, Pages 517-524

  Mallik, Kanad ^a   Falster, R J ^b   Wilshaw, P R ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b MEMC Electronic Materials SpA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; INSULATING MATERIALS; MICROWAVES;

DEEP LEVEL IMPURITIES;

SILICON;

EID: 0037495278     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/6/321     Document Type: Article

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