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Volumn 46, Issue 1-3, 1997, Pages 333-335

Deep levels of chromium in 4H-SiC 1

Author keywords

Chromium; Deep levels; Silicon carbide; Vanadium

Indexed keywords

ANNEALING; CHROMIUM; DEEP LEVEL TRANSIENT SPECTROSCOPY; ION IMPLANTATION; RADIOISOTOPES; VANADIUM;

EID: 0009374395     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)02000-4     Document Type: Article
Times cited : (20)

References (16)
  • 10
    • 0042244723 scopus 로고    scopus 로고
    • to be published
    • N. Achtziger et al., to be published.
    • Achtziger, N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.