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Volumn 46, Issue 1-3, 1997, Pages 333-335
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Deep levels of chromium in 4H-SiC 1
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Author keywords
Chromium; Deep levels; Silicon carbide; Vanadium
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Indexed keywords
ANNEALING;
CHROMIUM;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
ION IMPLANTATION;
RADIOISOTOPES;
VANADIUM;
CHEMICAL IDENTIFICATION;
SILICON CARBIDE;
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EID: 0009374395
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(96)02000-4 Document Type: Article |
Times cited : (20)
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References (16)
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